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Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy

Abstract:
We present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180°C to 260°C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi2Te3 thin film gives an insight into the growth mechanism.
Publication status:
Published

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Publisher copy:
10.1063/1.4898816

Authors

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Publisher:
American Institute of Physics Inc.
Journal:
APPLIED PHYSICS LETTERS More from this journal
Volume:
105
Issue:
15
Pages:
153114-153114
Publication date:
2014-10-13
DOI:
EISSN:
1077-3118
ISSN:
0003-6951


Language:
English
Pubs id:
pubs:486940
UUID:
uuid:0daa70ea-7f3a-4448-b45a-9cfb4348fc80
Local pid:
pubs:486940
Source identifiers:
486940
Deposit date:
2014-11-13
ARK identifier:

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