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Equilibrium model of bimodal distributions of epitaxial island growth.

Abstract:
We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.
Publication status:
Published

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Publisher copy:
10.1103/physrevlett.90.146101

Authors

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


Journal:
Physical Review Letters More from this journal
Volume:
90
Issue:
14
Pages:
146101
Publication date:
2003-04-01
DOI:
EISSN:
1079-7114
ISSN:
0031-9007


Language:
English
Pubs id:
pubs:4795
UUID:
uuid:0d594fee-d6f7-4209-b055-2628fc224f3a
Local pid:
pubs:4795
Source identifiers:
4795
Deposit date:
2012-12-19
ARK identifier:

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