A NEUTRON REFLECTIVITY STUDY OF HYDROGENATED SILICON SILICON-OXIDE THIN-FILMS

Journal article

Four samples of poly-silicon/silicon oxide layers deposited on a silicon substrate have been investigated using neutron reflectivity involving the time-of-flight technique. Three of the samples were hydrogenated using a furnace at 500 degrees C, a plasma at 350 degrees C or both treatments. The thicknesses and densities of the individual layers were determined. From the reflectivity curves fitted to the experimental data it was established that the surfaces of the samples were oxidised and that there was interdiffusion of oxygen between the layers. The extent of these features has been determined. There is some evidence for the presence of hydrogen in the sample which was exposed to a plasma. These experiments clearly demonstrate the usefulness of neutron reflectivity in studying the structure and changes in structure of epitaxial materials.

Authors: Ashworth, C; Messoloras, S; Stewart, R; Penfold, J

• Publication status: Published
• Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• Volume: 4
• Issue: 1
• Pages: 1-9
• Publication date: 1989-01-01
• DOI: 10.1088/0268-1242/4/1/001
• EISSN: 1361-6641
• ISSN: 0268-1242
• Language: English