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Postgrowth substitutional tin doping of 2D WS2 crystals using chemical vapor deposition

Abstract:

Doping of two-dimensional materials provides them tunable physical properties and widens their applications. Here, we demonstrate the postgrowth doping strategy in monolayer and bilayer tungsten disulfide (WS2) crystals, which utilizes a metal exchange mechanism, whereby Sn atoms become substitutional dopants in the W sites by energetically favorable replacement. We achieve this using chemical vapor deposition techniques, where high-quality grown WS2 single crystals are first grown and then s...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acsami.9b06588

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Institution:
University of Oxford
Department:
Materials
Role:
Author
ORCID:
0000-0001-8215-9469
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Institution:
University of Oxford
Department:
Materials
Role:
Author
ORCID:
0000-0003-3067-9520
More by this author
Institution:
University of Oxford
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Department:
Materials
Role:
Author
ORCID:
0000-0001-6333-7856
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Grant:
Funding agency for:
Chang, R
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Grant:
Funding agency for:
Warner, J
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Grant:
Funding agency for:
Warner, J
Publisher:
American Chemical Society Publisher's website
Journal:
ACS Applied Materials and Interfaces Journal website
Volume:
11
Issue:
27
Pages:
24279-24288
Publication date:
2019-06-28
Acceptance date:
2019-06-18
DOI:
EISSN:
1944-8252
ISSN:
1944-8244
Pmid:
31250625
Pubs id:
pubs:1025141
UUID:
uuid:0ce6191f-7f52-4491-960d-5f2a0e59717b
Source identifiers:
1025141
Local pid:
pubs:1025141

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