Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si - ORA - Oxford University Research Archive

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Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si

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APA Style

Howard, J., Craciun, V., Essary, C., Singh, R., & Jones, M. (2016). Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si. Applied Physics Letters, 81(18), 3431–3433.

MLA Style

Howard, J., et al. “Interfacial Layer Formation during High-Temperature Annealing of ZrO2 Thin Films on Si.” Applied Physics Letters, vol. 81, no. 18, 2016, pp. 3431–33.

Chicago Style

Howard, J, V Craciun, C Essary, R Singh, and M Jones. 2016. “Interfacial Layer Formation during High-Temperature Annealing of ZrO2 Thin Films on Si.” Applied Physics Letters 81 (18): 3431–33.
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+ Howard, J More by this author

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+ Craciun, V More by this author

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+ Essary, C More by this author

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+ Singh, R More by this author

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+ Jones, M More by this author

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Bibliographic Details

Journal:: Applied Physics Letters
Volume:: 81
Issue:: 18
Pages:: 3431-3433
Publication date:: 2002-01-01
ISSN:: 0003-6951
Source identifiers:: 118918

Item Description

Pubs id:: pubs:118918
UUID:: uuid:0c75c291-7e56-4db3-82fd-b70f67a81ca9
Local pid:: pubs:118918
Deposit date:: 2013-02-20

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Copyright date:: 2002

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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