Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si - ORA - Oxford University Research Archive

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Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si

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APA Style

Howard, J. M., Craciun, V., Essary, C., Singh, R. K., & Jones, M. O. (2002). Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si. Applied Physics Letters, 81(18), 3431–3433.

MLA Style

Howard, J. M., et al. “Interfacial Layer Formation during High-Temperature Annealing of ZrO2 Thin Films on Si.” Applied Physics Letters, vol. 81, no. 18, Applied Physics Letters, 2002, pp. 3431–33.

Chicago Style

Howard, JM, V Craciun, C Essary, RK Singh, and MO Jones. 2002. “Interfacial Layer Formation during High-Temperature Annealing of ZrO2 Thin Films on Si.” Applied Physics Letters 81 (18): 3431–33.
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Authors

Howard, JM More by this author

Craciun, V More by this author

Essary, C More by this author

Singh, RK More by this author

Jones, MO More by this author

Bibliographic Details

Journal:: Applied Physics Letters
Volume:: 81
Issue:: 18
Pages:: 3431-3433
Publication date:: 2002
ISSN:: 0003-6951
URN:: uuid:0c75c291-7e56-4db3-82fd-b70f67a81ca9
Source identifiers:: 118918
Local pid:: pubs:118918

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Copyright date:: 2002

License:: Terms and Conditions of Use for Oxford University Research Archive

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