Journal article
INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT
- Abstract:
-
The use of gallane-quinuclidine adduct (GaH3[N(CH 2CH2)3CH]) as a chemical precursor in metal organic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) has been investigated. The compound displays a long-term stability and can be readily admitted as a molecular beam into the growth chamber without significant decomposition. The surface decomposition pathway of the precursor on the growth surface is similar to that of the highly successful alane adduct precursors already in widesp...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- APPLIED PHYSICS LETTERS
- Volume:
- 63
- Issue:
- 9
- Pages:
- 1270-1272
- Publication date:
- 1993-08-30
- DOI:
- ISSN:
-
0003-6951
- Source identifiers:
-
44301
Item Description
- Language:
- English
- Pubs id:
-
pubs:44301
- UUID:
-
uuid:0c427ebc-3034-4b3b-af60-52e32094df0f
- Local pid:
- pubs:44301
- Deposit date:
- 2012-12-19
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- Copyright date:
- 1993
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