INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT

Journal article

The use of gallane-quinuclidine adduct (GaH3[N(CH 2CH2)3CH]) as a chemical precursor in metal organic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) has been investigated. The compound displays a long-term stability and can be readily admitted as a molecular beam into the growth chamber without significant decomposition. The surface decomposition pathway of the precursor on the growth surface is similar to that of the highly successful alane adduct precursors already in widespread use. Efficient MOMBE growth of GaAs is observed at much lower temperatures than is the case when conventional Ga alkyl precursors are employed. These results show that gallane adducts may have the potential to act as practical low carbon precursors in CBE and MOMBE.

Authors: Foord, J; Whitaker, T; Downing, E; Ohare, D; Jones, A

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 63
• Issue: 9
• Pages: 1270-1272
• Publication date: 1993-08-30
• DOI: 10.1063/1.109754
• ISSN: 0003-6951
• Language: English