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INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT

Abstract:

The use of gallane-quinuclidine adduct (GaH3[N(CH 2CH2)3CH]) as a chemical precursor in metal organic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) has been investigated. The compound displays a long-term stability and can be readily admitted as a molecular beam into the growth chamber without significant decomposition. The surface decomposition pathway of the precursor on the growth surface is similar to that of the highly successful alane adduct precursors already in widesp...

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Publication status:
Published

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Publisher copy:
10.1063/1.109754

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Journal:
APPLIED PHYSICS LETTERS
Volume:
63
Issue:
9
Pages:
1270-1272
Publication date:
1993-08-30
DOI:
ISSN:
0003-6951
Source identifiers:
44301
Language:
English
Pubs id:
pubs:44301
UUID:
uuid:0c427ebc-3034-4b3b-af60-52e32094df0f
Local pid:
pubs:44301
Deposit date:
2012-12-19

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