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Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Abstract:
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1103/physrevapplied.22.024019

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
ORCID:
0000-0003-2396-9730
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Role:
Author
ORCID:
0000-0001-7501-3250
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Role:
Author
ORCID:
0000-0002-1616-1613


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Funder identifier:
https://ror.org/0439y7842
Grant:
EP/V028049/1


Publisher:
American Physical Society
Journal:
Physical Review Applied More from this journal
Volume:
22
Issue:
2
Article number:
24019
Publication date:
2024-08-07
Acceptance date:
2024-06-17
DOI:
EISSN:
2331-7019


Language:
English
Pubs id:
2021133
Local pid:
pubs:2021133
Deposit date:
2024-08-11

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