Simulation of heavily irradiated silicon pixel detectors

Journal article

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.

Authors: Swartz, M; Chiochia, V; Allkofer, Y; Amsler, C; Bortoletto, D

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: SLAC National Accelerator Laboratory
• Journal: Proceedings of the International Symposium on Detector Development for Particle, Astroparticle and Synchrotron Radiation Experiments (SNIC 2006)
• Article number: 0014
• Series: eConf
• Series number: 0604032
• Place of publication: Stanford, California
• Publication date: 2006-04-03
• Event title: International Symposium on Detector Development for Particle, Astroparticle and Synchrotron Radiation Experiments (SNIC 2006)
• Event location: Stanford, California
• Event website: https://www.slac.stanford.edu/econf/C0604032/
• Event start date: 2006-04-03
• Event end date: 2006-04-06
• Language: English