ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES

Journal article

This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to persist at the interface during annealing at 250°C as the metal reacts to form the CoSi silicide. The position-sensitive atom probe has been applied to the analysis of metal-semiconductor interfaces for the first time, showing the potential of this technique for mapping the variation in chemistry over an area of the interface.

Authors: Cerezo, A; Grovenor, C; Ozsanlav, R

• Publication status: Published
• Publisher: Publ by IOP Publishing Ltd
• Journal: INSTITUTE OF PHYSICS CONFERENCE SERIES
• Volume: 117
• Issue: 117
• Pages: 97-100
• Publication date: 1991-01-01
• ISSN: 0951-3248
• Language: English