Journal article
Cation-disorder engineering promotes efficient charge-carrier transport in AgBiS2 nanocrystal films
- Abstract:
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Efficient charge-carrier transport is critical to the success of emergent semiconductors in photovoltaic applications. So far, disorder has been considered detrimental for charge-carrier transport, lowering mobilities and causing fast recombination. This work demonstrates that, when properly engineered, cation disorder in a multinary chalcogenide semiconductor can considerably enhance the charge-carrier mobility and extend the charge-carrier lifetime. Here, the properties of AgBiS2 nanocrystals (NCs) are explored where Ag and Bi cation-ordering can be modified via thermal-annealing. Local Ag-rich and Bi-rich domains formed during hot-injection synthesis are transformed to induce homogeneous disorder (random Ag-Bi distribution). Such cation engineering results in a six-fold increase in the charge-carrier mobility, reaching ∼2.7 cm2V−1s−1 in AgBiS2 NC thin films. It is further demonstrated that homogeneous cation disorder reduces charge-carrier localisation, a hallmark of charge-carrier transport recently observed in silver-bismuth semiconductors. This work proposes that cation-disorder engineering flattens the disordered electronic landscape, removing tail states that would otherwise exacerbate Anderson localisation of small polaronic states. Together, these findings unravel how cation-disorder engineering in multinary semiconductors can enhance the efficiency of renewable energy applications.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Version of record, pdf, 1.9MB, Terms of use)
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- Publisher copy:
- 10.1002/adma.202305009
Authors
- Publisher:
- Wiley
- Journal:
- Advanced Materials More from this journal
- Volume:
- 35
- Issue:
- 48
- Article number:
- 2305009
- Publication date:
- 2023-10-24
- Acceptance date:
- 2023-09-05
- DOI:
- EISSN:
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1521-4095
- ISSN:
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0935-9648
- Pmid:
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37670455
- Language:
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English
- Keywords:
- Pubs id:
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1522588
- Local pid:
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pubs:1522588
- Deposit date:
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2023-09-11
Terms of use
- Copyright holder:
- Righetto et al.
- Copyright date:
- 2023
- Rights statement:
- © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
- Licence:
- CC Attribution (CC BY)
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