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Cation-disorder engineering promotes efficient charge-carrier transport in AgBiS2 nanocrystal films

Abstract:

Efficient charge-carrier transport is critical to the success of emergent semiconductors in photovoltaic applications. So far, disorder has been considered detrimental for charge-carrier transport, lowering mobilities and causing fast recombination. This work demonstrates that, when properly engineered, cation disorder in a multinary chalcogenide semiconductor can considerably enhance the charge-carrier mobility and extend the charge-carrier lifetime. Here, the properties of AgBiS2 nanocrystals (NCs) are explored where Ag and Bi cation-ordering can be modified via thermal-annealing. Local Ag-rich and Bi-rich domains formed during hot-injection synthesis are transformed to induce homogeneous disorder (random Ag-Bi distribution). Such cation engineering results in a six-fold increase in the charge-carrier mobility, reaching ∼2.7 cm2V−1s−1 in AgBiS2 NC thin films. It is further demonstrated that homogeneous cation disorder reduces charge-carrier localisation, a hallmark of charge-carrier transport recently observed in silver-bismuth semiconductors. This work proposes that cation-disorder engineering flattens the disordered electronic landscape, removing tail states that would otherwise exacerbate Anderson localisation of small polaronic states. Together, these findings unravel how cation-disorder engineering in multinary semiconductors can enhance the efficiency of renewable energy applications.

Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1002/adma.202305009

Authors



Publisher:
Wiley
Journal:
Advanced Materials More from this journal
Volume:
35
Issue:
48
Article number:
2305009
Publication date:
2023-10-24
Acceptance date:
2023-09-05
DOI:
EISSN:
1521-4095
ISSN:
0935-9648
Pmid:
37670455


Language:
English
Keywords:
Pubs id:
1522588
Local pid:
pubs:1522588
Deposit date:
2023-09-11

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