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Journal article

ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON

Publication status:
Published

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Publisher copy:
10.1080/01418619308219357

Authors


More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
CZERNUSZKA, J More by this author
Journal:
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES
Volume:
68
Issue:
1
Pages:
59-80
Publication date:
1993-07-05
DOI:
EISSN:
1460-6992
ISSN:
0141-8610
URN:
uuid:0b7a43f8-dfe0-475e-951a-d0d35215b285
Source identifiers:
27800
Local pid:
pubs:27800

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