Journal article
BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE
- Abstract:
- An outline is given of a method for high resolution BSE analysis of chemical composition across interfaces in bulk semiconductor specimens. In this method the effects of electron beam diameter and beam spreading, which normally limit spatial resolution, are largely removed by a deconvolution technique in which these effects are measured experimentally. Line profiles giving 10-90% interface widths as low as 19nm have been obtained at 30kV from an abrupt interface.
- Publication status:
- Published
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Bibliographic Details
- Publisher:
- Publ by Inst of Physics Publ Ltd
- Journal:
- INSTITUTE OF PHYSICS CONFERENCE SERIES
- Issue:
- 117
- Pages:
- 781-784
- Publication date:
- 1991-01-01
- ISSN:
-
0951-3248
Item Description
- Language:
- English
- Pubs id:
-
pubs:15770
- UUID:
-
uuid:0b5ccc01-140f-4275-b713-febb5e22c234
- Local pid:
- pubs:15770
- Source identifiers:
-
15770
- Deposit date:
- 2012-12-19
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- Copyright date:
- 1991
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