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BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE

Abstract:
An outline is given of a method for high resolution BSE analysis of chemical composition across interfaces in bulk semiconductor specimens. In this method the effects of electron beam diameter and beam spreading, which normally limit spatial resolution, are largely removed by a deconvolution technique in which these effects are measured experimentally. Line profiles giving 10-90% interface widths as low as 19nm have been obtained at 30kV from an abrupt interface.
Publication status:
Published

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Publisher:
Publ by Inst of Physics Publ Ltd
Journal:
INSTITUTE OF PHYSICS CONFERENCE SERIES More from this journal
Issue:
117
Pages:
781-784
Publication date:
1991-01-01
ISSN:
0951-3248
Language:
English
Pubs id:
pubs:15770
UUID:
uuid:0b5ccc01-140f-4275-b713-febb5e22c234
Local pid:
pubs:15770
Source identifiers:
15770
Deposit date:
2012-12-19

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