Journal article

A novel high gain silicon based spin transistor

Abstract:: A novel high gain silicon based spin transistor was presented. The spin transistors were fabricated using standard photolithography on n- and p-type silicon-on-insulator (SOI) wafers. The results showed that connected in common emitter configuration and measured at room temperature, the transistor exhibited similar characteristics to that of a conventional bipolar transistor, except the current gain is negative.

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APA Style

Dennis, C., Sirisathitkul, C., Ensell, G., Gregg, J., & Thompson, S. (2003). A novel high gain silicon based spin transistor. Digests of the Intermag Conference.

MLA Style

Dennis, C, et al. “A Novel High Gain Silicon Based Spin Transistor.” Digests of the Intermag Conference, 2003.

Chicago Style

Dennis, C, C Sirisathitkul, G Ensell, J Gregg, and S Thompson. 2003. “A Novel High Gain Silicon Based Spin Transistor.” Digests of the Intermag Conference.
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Authors

+ Dennis, C More by this author

Role:: Author

+ Sirisathitkul, C More by this author

Role:: Author

+ Ensell, G More by this author

Role:: Author

+ Gregg, J More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Thompson, S More by this author

Role:: Author

Journal:: Digests of the Intermag Conference More from this journal
Publication date:: 2003-01-01
ISSN:: 0074-6843

Language:: English
Pubs id:: pubs:252224
UUID:: uuid:0ae77466-3492-4085-8785-0dfe2a5a5158
Local pid:: pubs:252224
Source identifiers:: 252224
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_0ae774663492408587850dfe2a5a5158

Terms of use

Copyright date:: 2003

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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