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In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)

Abstract:

We have observed the development of the surfaces during gas-source growth of silicon and germanium in an elevated temperature ultrahigh vacuum scanning tunneling microscopy (STM), with near-atomic resolution under a range of temperature and flux, which are the two dominant parameters, and applied atomistic modeling to the structures seen by STM to enable us to give confident interpretation of the results. A key role in the growth of silicon and germanium on Si(001) from disilane and germane, ...

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Publication status:
Published

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Publisher copy:
10.1116/1.581200

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Volume:
16
Issue:
3
Pages:
1938-1943
Publication date:
1998-01-01
DOI:
ISSN:
0734-2101
URN:
uuid:0a9ec5df-baa4-47b9-bdd9-675b7860d9ce
Source identifiers:
13578
Local pid:
pubs:13578

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