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Reaction models for the homoepitaxial and selected area growth of GaSb by MOMBE

Abstract:: The surface chemistry of triethylgallium and Sb4 on GaAs and GaSb has been investigated experimentally, and the results have been used to produce a realistic growth model for GaSb homoepitaxial growth. The experimental results suggest that site-blocking effects by volatile Gp V species in CBE will be limited to low growth temperatures. It is suggested that the unique surface reconstructions of GaSb(1 0 0) are responsible for the observed high-temperature group V flux effects observed experime...
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Publication status:: Published

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APA Style

Foord, J., Howard, F., & Davies, G. (1998). Reaction models for the homoepitaxial and selected area growth of GaSb by MOMBE. 188(1-4), 159–167.

MLA Style

Foord, J., et al. Reaction Models for the Homoepitaxial and Selected Area Growth of GaSb by MOMBE. no. 1-4, 1998, pp. 159–67.

Chicago Style

Foord, J, F Howard, and G Davies. 1998. “Reaction Models for the Homoepitaxial and Selected Area Growth of GaSb by MOMBE.” In , 188:159–67.
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Publisher copy:: 10.1016/S0022-0248(98)00089-X

Authors

+ Foord, J More by this author

Institution:

University of Oxford

Division:

MPLS

Department:

Chemistry

Sub department:

Physical & Theoretical Chem

Role:

Author

+ Howard, F More by this author

Role:

Author

+ Davies, G More by this author

Role:

Author

Bibliographic Details

Host title:: JOURNAL OF CRYSTAL GROWTH
Volume:: 188
Issue:: 1-4
Pages:: 159-167
Publication date:: 1998-06-01
DOI:: 10.1016/S0022-0248(98)00089-X
ISSN:: 0022-0248

Item Description

Keywords:: III-V semiconductors

thin films

computer modelling and simulations

surface reactions
Pubs id:: pubs:36564
UUID:: uuid:0a995a35-ee3c-45f0-8bcd-3c8b9ab2b717
Local pid:: pubs:36564
Source identifiers:: 36564
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1998

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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