Reaction models for the homoepitaxial and selected area growth of GaSb by MOMBE

Conference item

The surface chemistry of triethylgallium and Sb4 on GaAs and GaSb has been investigated experimentally, and the results have been used to produce a realistic growth model for GaSb homoepitaxial growth. The experimental results suggest that site-blocking effects by volatile Gp V species in CBE will be limited to low growth temperatures. It is suggested that the unique surface reconstructions of GaSb(1 0 0) are responsible for the observed high-temperature group V flux effects observed experimentally. This is in sharp contrast to the analogous CBE GaAs(1 0 0) growth system. The selective area growth of GaSb has also been examined experimentally, and a simple reaction model constructed to describe experimental data, indicating a strong dependence of selectivity upon Sb4 and TEG flux intensities, as well as surface temperature. The model assumes that adsorption of Gp V species upon the mask catalyses Gp III precursor decomposition. Again good agreement with experiment is observed. © 1998 Elsevier Science B. V. All rights reserved.

Authors: Foord, J; Howard, F; Davies, G

• Publication status: Published
• Host title: JOURNAL OF CRYSTAL GROWTH
• Volume: 188
• Issue: 1-4
• Pages: 159-167
• Publication date: 1998-06-01
• DOI: 10.1016/S0022-0248(98)00089-X
• ISSN: 0022-0248
• Keywords: computer modelling and simulations; III-V semiconductors; thin films; surface reactions