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Femtosecond exciton dynamics and the Mott transition in GaN under resonant excitation

Abstract:

We present resonant femtosecond pump-probe reflectance measurements of excitons in high quality wurtzite GaN epilayers for a range of lattice temperatures and various pump intensities. From the density dependence of the excitonic bleaching we find that the Mott density is nMott ≤ 2.2 × 1019 cm-3. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic phonon emission on a timescale of ∼16 ps. At temperatures above 60 K we observe a much longer relaxation comp...

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
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Journal:
Physica Status Solidi (B) Basic Research
Volume:
216
Issue:
1
Pages:
57-62
Publication date:
1999-11-01
ISSN:
0370-1972
Source identifiers:
134679
Language:
English
Pubs id:
pubs:134679
UUID:
uuid:0a55d507-5d7a-4555-85dc-aa308c07e8a7
Local pid:
pubs:134679
Deposit date:
2012-12-19

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