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MICROWAVE CONDUCTIVITY IN PLASTICALLY DEFORMED SILICON

Publication status:: Published

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APA Style

Brohl, M., & Alexander, H. (1989). MICROWAVE CONDUCTIVITY IN PLASTICALLY DEFORMED SILICON. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 163–168.

MLA Style

Brohl, M, and H Alexander. “MICROWAVE CONDUCTIVITY IN PLASTICALLY DEFORMED SILICON.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 163–68.

Chicago Style

Brohl, M, and H Alexander. 1989. “MICROWAVE CONDUCTIVITY IN PLASTICALLY DEFORMED SILICON.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:163–68.
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Authors

+ Brohl, M More by this author

Role:: Author

+ Alexander, H More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 163-168
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: dislocation
Pubs id:: pubs:28816
UUID:: uuid:0a3e8f32-b764-4437-819a-53efc57dc394
Local pid:: pubs:28816
Source identifiers:: 28816
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_0a3e8f32b7644437819a53efc57dc394

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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