Journal article

Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

Publication status:: Published

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APA Style

Goldfarb, I., & Briggs, G. (2002). Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope. JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B, 20(4), 1419–1426.

MLA Style

Goldfarb, I, and G Briggs. “Morphological Evolution of Epitaxial Cobalt-Semiconductor Compound Layers during Growth in a Scanning Tunneling Microscope.” JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B, vol. 20, no. 4, 2002, pp. 1419–26.

Chicago Style

Goldfarb, I, and G Briggs. 2002. “Morphological Evolution of Epitaxial Cobalt-Semiconductor Compound Layers during Growth in a Scanning Tunneling Microscope.” JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B 20 (4): 1419–26.
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Publisher copy:: 10.1116/1.1491555

Authors

+ Goldfarb, I More by this author

Role:: Author

+ Briggs, G More by this author

Role:: Author

Journal:: JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B More from this journal
Volume:: 20
Issue:: 4
Pages:: 1419-1426
Publication date:: 2002-01-01
DOI:: 10.1116/1.1491555
ISSN:: 1071-1023

Pubs id:: pubs:174529
UUID:: uuid:0941f4e8-e32d-4051-9de1-6481481851a5
Local pid:: pubs:174529
Source identifiers:: 174529
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_0941f4e8e32d40519de16481481851a5

Terms of use

Copyright date:: 2002

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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