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Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

Abstract:

Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exceptionally high carrier mobilities and lifetimes. We performed measurements of GaAs/AlGaAs core-shell nanowires using optical pump-terahertz probe spectroscopy: a noncontact and accurate probe of c...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/nl503043p

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More from this funder
Name:
Royal Commission for the Exhibition of 1851
Funding agency for:
Joyce, H
More from this funder
Name:
Australian Research Council
More from this funder
Name:
Engineering and Physical Sciences Research Council
Publisher:
American Chemical Society
Journal:
Nano letters More from this journal
Volume:
14
Issue:
10
Pages:
5989-5994
Publication date:
2014-10-01
DOI:
EISSN:
1530-6992
ISSN:
1530-6984
Language:
English
Keywords:
Pubs id:
pubs:485317
UUID:
uuid:0941c0d9-9b74-414f-b847-afbadf6993f1
Local pid:
pubs:485317
Source identifiers:
485317
Deposit date:
2014-10-03

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