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GETTERING IN SILICON

Publication status:: Published

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APA Style

Falster, R. (1989). GETTERING IN SILICON. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 443–453.

MLA Style

Falster, R. “GETTERING IN SILICON.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 443–53.

Chicago Style

Falster, R. 1989. “GETTERING IN SILICON.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:443–53.
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Authors

+ Falster, R More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 443-453
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: GOLD

DIFFUSION
Pubs id:: pubs:26722
UUID:: uuid:091f1534-1a83-4f14-9cf9-463e40fee3ea
Local pid:: pubs:26722
Source identifiers:: 26722
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_091f15341a834f149cf9463e40fee3ea

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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