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Structural and electrical characterization of SiO2/MgO(001) barriers on Si for a magnetic transistor

Publication status:: Published

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APA Style

Kohn, A., Kovacs, A., Uhrmann, T., Dimopoulos, T., & Brueckl, H. (2009). Structural and electrical characterization of SiO2/MgO(001) barriers on Si for a magnetic transistor. APPLIED PHYSICS LETTERS, 95(4), 042506–042506.

MLA Style

Kohn, A., et al. “Structural and Electrical Characterization of SiO2/MgO(001) Barriers on Si for a Magnetic Transistor.” APPLIED PHYSICS LETTERS, vol. 95, no. 4, 2009, pp. 042506–06.

Chicago Style

Kohn, A, A Kovacs, T Uhrmann, T Dimopoulos, and H Brueckl. 2009. “Structural and Electrical Characterization of SiO2/MgO(001) Barriers on Si for a Magnetic Transistor.” APPLIED PHYSICS LETTERS 95 (4): 042506–.
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Publisher copy:: 10.1063/1.3182732

Authors

+ Kohn, A More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Author

+ Kovacs, A More by this author

Role:: Author

+ Uhrmann, T More by this author

Role:: Author

+ Dimopoulos, T More by this author

Role:: Author

+ Brueckl, H More by this author

Role:: Author

Journal:: APPLIED PHYSICS LETTERS More from this journal
Volume:: 95
Issue:: 4
Pages:: 042506-042506
Publication date:: 2009-07-27
DOI:: 10.1063/1.3182732
ISSN:: 0003-6951

Keywords:: magnesium compounds

silicon compounds

capacitors

electronic density of states

electrochemical electrodes

tunnelling

silicon

MOSFET
Pubs id:: pubs:3468
UUID:: uuid:084137fa-1848-4fdd-9065-70cac4e197da
Local pid:: pubs:3468
Source identifiers:: 3468
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 2009

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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