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Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots

Abstract:

InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing. These results show that slightly different values for the 2D-3D transition can also be obtained in InGaAs/GaAs depending on AsH3 PP. Photolumine...

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Publication status:
Published

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Journal:
THIN SOLID FILMS More from this journal
Volume:
357
Issue:
1
Pages:
40-45
Publication date:
1999-12-01
Event title:
Symposium on Growth Instabilities and Decomposit ion During Heteroepitaxy at the MRS Fall Meeting
DOI:
ISSN:
0040-6090
Keywords:
Pubs id:
pubs:4734
UUID:
uuid:0826a798-e298-4962-a2f9-4be71b6454c1
Local pid:
pubs:4734
Source identifiers:
4734
Deposit date:
2012-12-19

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