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Vertically standing Ge nanowires on GaAs(110) substrates

Abstract:

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the direction. Using this unique property, vertical Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which...

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Journal:
Nanotechnology More from this journal
Volume:
19
Issue:
12
Pages:
125602-125602
Publication date:
2008-03-26
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
Language:
English
Pubs id:
pubs:172704
UUID:
uuid:077f46fc-ef9f-47e8-8ce7-f726478ca2d2
Local pid:
pubs:172704
Source identifiers:
172704
Deposit date:
2012-12-19

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