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Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure

Abstract:

We have carried out sensitive measurement of the vertical transport characteristics of several GaAs/AlAs "double-barrier" heterostructures pressurized just beyond the type-II transition, and in the presence of longitudinal magnetic fields of up to 15 T. Towards the upper field limit, clear periodic structure is observed in the second derivative current-voltage characteristic of the resonance attributed to the process Xt(1)→Xt(1) + TOAlAs, where Xt(1) indicates the lowest quasiconfined subband...

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Physical Review B - Condensed Matter and Materials Physics
Volume:
57
Issue:
3
Pages:
1746-1748
Publication date:
1998-01-15
ISSN:
0163-1829
Language:
English
Pubs id:
pubs:133848
UUID:
uuid:07783b43-a234-4d80-a19e-170f18dda458
Local pid:
pubs:133848
Source identifiers:
133848
Deposit date:
2012-12-19

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