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MODELS OF THE ATOMIC AND ELECTRONIC-STRUCTURES OF GRAIN-BOUNDARIES IN SILICON

Publication status:: Published

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APA Style

Sutton, A. (1989). MODELS OF THE ATOMIC AND ELECTRONIC-STRUCTURES OF GRAIN-BOUNDARIES IN SILICON. 104, 13–24.

MLA Style

Sutton, A. MODELS OF THE ATOMIC AND ELECTRONIC-STRUCTURES OF GRAIN-BOUNDARIES IN SILICON. 1989, pp. 13–24.

Chicago Style

Sutton, A. 1989. “MODELS OF THE ATOMIC AND ELECTRONIC-STRUCTURES OF GRAIN-BOUNDARIES IN SILICON.” In , 104:13–24.
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Authors

+ Sutton, A More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 13-24
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: SEMICONDUCTORS

GERMANIUM

TWIN BOUNDARY

SURFACES

STATES

Si

ORDER

STABILITY
Pubs id:: pubs:27696
UUID:: uuid:0740a503-9d79-4d6f-b994-46118a44a582
Local pid:: pubs:27696
Source identifiers:: 27696
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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