Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Journal article

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W−1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

Authors: Giraud, P; Hou, B; Pak, S; Sohn, J; Morris, S

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: IOP Publishing
• Journal: Nanotechnology
• Volume: 29
• Issue: 7
• Article number: 075202
• Publication date: 2018-01-11
• Acceptance date: 2017-12-19
• DOI: 10.1088/1361-6528/aaa2e6
• EISSN: 1361-6528
• ISSN: 0957-4484
• Pmid: 29324436
• Language: English
• Keywords: PbS; p-type nanowires; nanowire FET; photodetector; Journal Article; colloidal synthesis; phototransistor