Conference item
Patterning by selective etching of poly-silicon using a high etch rate single sided gaseous process
- Abstract:
- This paper presents etching process developments using a single-side gaseous etch process based on the thermal reaction of poly-Silicon and the etching gas (molecular fluorine), that results in a high etching selectivity between layers, and a high etching rate. This work was carried out in the context of the development of solar cell architectures beyond PERC and TOPCon, where more sophisticated etching steps are required in order to accurately pattern poly-silicon layers across the wafer surface.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Version of record, pdf, 1.2MB, Terms of use)
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- Publisher copy:
- 10.52825/siliconpv.v2i.1317
Authors
- Publisher:
- TIB Open Publishing
- Journal:
- SiliconPV Conference Proceedings More from this journal
- Volume:
- 2
- Publication date:
- 2024-12-06
- Acceptance date:
- 2024-08-02
- Event title:
- 14th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2024)
- Event location:
- Chambéry, France
- Event website:
- https://event.fourwaves.com/siliconpv/pages
- Event start date:
- 2024-04-15
- Event end date:
- 2024-04-19
- DOI:
- EISSN:
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2940-2123
- Language:
-
English
- Keywords:
- Pubs id:
-
2069030
- Local pid:
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pubs:2069030
- Deposit date:
-
2024-12-09
- ARK identifier:
Terms of use
- Copyright holder:
- Clochard et al
- Copyright date:
- 2024
- Rights statement:
- Copyright © 2024 Laurent Clochard, David Young, Mingzhe Yu, Ruy Sebastian Bonilla. This work is licensed under a Creative Commons Attribution 4.0 International License.
- Licence:
- CC Attribution (CC BY)
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