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Accumulation of geometrically necessary dislocations near grain boundaries in deformed copper

Abstract:

Cross-correlation-based analysis of electron backscatter diffraction patterns has been used to map the distribution of geometrically necessary dislocation (GND) density in deformed polycrystalline copper. Patterning of the dislocations into high-density cell walls and low-density cell interiors was readily observed at the micron scale. Patterning at the longer length scale of the grain size was also evident with high-density regions (GND hot spots) tending to be in clusters, often found close...

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Publication status:
Published

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Journal:
PHILOSOPHICAL MAGAZINE LETTERS
Volume:
92
Issue:
11
Pages:
580-588
Publication date:
2012-01-01
DOI:
EISSN:
1362-3036
ISSN:
0950-0839
URN:
uuid:05b545dc-ded7-4971-a8f6-8cdaf54be24a
Source identifiers:
356843
Local pid:
pubs:356843
Language:
English
Keywords:

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