Journal article
Accumulation of geometrically necessary dislocations near grain boundaries in deformed copper
- Abstract:
-
Cross-correlation-based analysis of electron backscatter diffraction patterns has been used to map the distribution of geometrically necessary dislocation (GND) density in deformed polycrystalline copper. Patterning of the dislocations into high-density cell walls and low-density cell interiors was readily observed at the micron scale. Patterning at the longer length scale of the grain size was also evident with high-density regions (GND hot spots) tending to be in clusters, often found close...
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- Publication status:
- Published
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- Publisher copy:
- 10.1080/09500839.2012.700412
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Bibliographic Details
- Journal:
- PHILOSOPHICAL MAGAZINE LETTERS
- Volume:
- 92
- Issue:
- 11
- Pages:
- 580-588
- Publication date:
- 2012-01-01
- DOI:
- EISSN:
-
1362-3036
- ISSN:
-
0950-0839
- Source identifiers:
-
356843
Item Description
- Language:
- English
- Keywords:
- Pubs id:
-
pubs:356843
- UUID:
-
uuid:05b545dc-ded7-4971-a8f6-8cdaf54be24a
- Local pid:
- pubs:356843
- Deposit date:
- 2013-11-16
Terms of use
- Copyright date:
- 2012
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