Accumulation of geometrically necessary dislocations near grain boundaries in deformed copper

Journal article

Cross-correlation-based analysis of electron backscatter diffraction patterns has been used to map the distribution of geometrically necessary dislocation (GND) density in deformed polycrystalline copper. Patterning of the dislocations into high-density cell walls and low-density cell interiors was readily observed at the micron scale. Patterning at the longer length scale of the grain size was also evident with high-density regions (GND hot spots) tending to be in clusters, often found close to some but not all grain boundaries and triple junctions. © 2012 Copyright Taylor and Francis Group, LLC.

Authors: Jiang, J; Britton, T; Wilkinson, A

• Publication status: Published
• Journal: PHILOSOPHICAL MAGAZINE LETTERS
• Volume: 92
• Issue: 11
• Pages: 580-588
• Publication date: 2012-01-01
• DOI: 10.1080/09500839.2012.700412
• EISSN: 1362-3036
• ISSN: 0950-0839
• Language: English
• Keywords: dislocations; EBSD; deformation; GNDs