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Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice.

Abstract:

We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon-phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Engineering Science
Role:
Author
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Journal:
Journal of physics. Condensed matter : an Institute of Physics journal
Volume:
25
Issue:
29
Pages:
295401
Publication date:
2013-07-01
DOI:
EISSN:
1361-648X
ISSN:
0953-8984
Source identifiers:
411377
Language:
English
Keywords:
Pubs id:
pubs:411377
UUID:
uuid:04a71a67-e8fa-489b-8a19-c6974a52157c
Local pid:
pubs:411377
Deposit date:
2013-11-16

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