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The effects of doping density and temperature on the optoelectronic properties of formamidinium tin triiodide thin films

Abstract:

Intrinsic and extrinsic optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3) thin films, whose background hole doping density was varied through SnF2 addition during film fabrication. Monomolecular charge-carrier recombination exhibits both a dopant-mediated part that grows linearly with hole doping density and remnant contributions that remain under tin-enriched processing conditions. At hole densities near 1020 cm-3, a strong Burstein-Moss effect increases absorp...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1002/adma.201804506

Authors


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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
Expand authors...
Publisher:
Wiley Publisher's website
Journal:
Advanced Materials Journal website
Volume:
30
Issue:
44
Pages:
1804506
Publication date:
2018-09-17
Acceptance date:
2018-08-17
DOI:
EISSN:
1521-4095
ISSN:
0935-9648
Pubs id:
pubs:911552
URN:
uri:046ae603-8c31-4d8b-a86e-a4b818bc38ee
UUID:
uuid:046ae603-8c31-4d8b-a86e-a4b818bc38ee
Local pid:
pubs:911552

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