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TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC

Publication status:: Published

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APA Style

Qin, C., & Roberts, S. (1989). TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 409–414.

MLA Style

Qin, C, and S Roberts. “TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 409–14.

Chicago Style

Qin, C, and S Roberts. 1989. “TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:409–14.
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Authors

+ Qin, C More by this author

Role:: Author

+ Roberts, S More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 409-414
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: SILICON-CARBIDE

SINGLE-CRYSTALS

anisotropy
Pubs id:: pubs:29300
UUID:: uuid:021a18c2-eefe-4a72-95f9-e5f908d34b87
Local pid:: pubs:29300
Source identifiers:: 29300
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_021a18c2eefe4a7295f9e5f908d34b87

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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