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TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC

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APA Style

Qin, C., & Roberts, S. (2016). TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC. STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 104, 409–414.

MLA Style

Qin, C., and S. Roberts. “TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC.” STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, vol. 104, 2016, pp. 409–14.

Chicago Style

Qin, C, and S Roberts. 2016. “TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC.” In STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 104:409–14.
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+ Qin, C More by this author

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+ Roberts, S More by this author

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Bibliographic Details

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989
Volume:: 104
Pages:: 409-414
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
Source identifiers:: 29300
ISBN:: 0854980601

Item Description

Keywords:: SILICON-CARBIDE

anisotropy

SINGLE-CRYSTALS
Pubs id:: pubs:29300
UUID:: uuid:021a18c2-eefe-4a72-95f9-e5f908d34b87
Local pid:: pubs:29300
Deposit date:: 2012-12-19

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Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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