Journal article

Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures

Publication status:: Published

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APA Style

Zou, J., Cockayne, D., & Usher, B. (1996). Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures. APPLIED PHYSICS LETTERS, 68(5), 673–674.

MLA Style

Zou, J, et al. “Temperature-Dependent Generation of Misfit Dislocations in In0.2Ga0.8As/GaAs Single Heterostructures.” APPLIED PHYSICS LETTERS, vol. 68, no. 5, 1996, pp. 673–74.

Chicago Style

Zou, J, D Cockayne, and B Usher. 1996. “Temperature-Dependent Generation of Misfit Dislocations in In0.2Ga0.8As/GaAs Single Heterostructures.” APPLIED PHYSICS LETTERS 68 (5): 673–74.
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Publisher copy:: 10.1063/1.116587

Authors

+ Zou, J More by this author

Role:: Author

+ Cockayne, D More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Author

+ Usher, B More by this author

Role:: Author

Journal:: APPLIED PHYSICS LETTERS More from this journal
Volume:: 68
Issue:: 5
Pages:: 673-674
Publication date:: 1996-01-29
DOI:: 10.1063/1.116587
ISSN:: 0003-6951

Pubs id:: pubs:15247
UUID:: uuid:0211526d-7884-43f5-b671-116f6e18a894
Local pid:: pubs:15247
Source identifiers:: 15247
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_0211526d788443f5b671116f6e18a894

Terms of use

Copyright date:: 1996

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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