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Analytic model of thermal runaway in silicon detectors

Abstract:

Usually the thermal behavior of silicon detectors is predicted from numerical methods (FEA or finite difference methods). However, these results are specific to the modelled structure and the input parameter set. Here we pursue the complementary, analytic, approach which offers some general (if approximate) results that allow relatively simple extrapolation of the performance of a specific detector design. We present simple network models to calculate analytically the limit of thermal stabili...

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Publication status:
Published

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Publisher copy:
10.1016/j.nima.2010.02.264

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Particle Physics
Role:
Author
Journal:
NUCLEAR INSTRUMENTS and METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume:
618
Issue:
1-3
Pages:
131-138
Publication date:
2010-06-01
DOI:
ISSN:
0168-9002
URN:
uuid:0193c19a-1d10-4edd-8c94-2873de7ff8fc
Source identifiers:
65312
Local pid:
pubs:65312

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