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Journal article

Nanoscale memory cell based on a nanoelectromechanical switched capacitor.

Abstract:

The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory and carbon nanotube field-effect transistors, for ultra-large-scale integrated memory. Electromechanical devices are suitable for memory applications because of their excellent 'ON-OFF' ratios and fast switching characteristics, but they involve larger cells and more complex fab...

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Publication status:
Published

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Publisher copy:
10.1038/nnano.2007.417

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Engineering Science
Butler, TP More by this author
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Journal:
Nature nanotechnology
Volume:
3
Issue:
1
Pages:
26-30
Publication date:
2008-01-05
DOI:
EISSN:
1748-3395
ISSN:
1748-3387
URN:
uuid:01680451-1ee9-49ef-a621-2edec18f8475
Source identifiers:
332134
Local pid:
pubs:332134

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