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Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen

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APA Style

Owen, J., Miki, K., Bowler, D. R., Goringe, C., Goldfarb, I., & Briggs, G. (1997). Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen. SURFACE SCIENCE, 394(1-3), 91–104.

MLA Style

Owen, J., et al. “Gas-Source Growth of Group IV Semiconductors: II. Growth Regimes and the Effect of Hydrogen.” SURFACE SCIENCE, vol. 394, no. 1-3, 1997, pp. 91–104.

Chicago Style

Owen, J, K Miki, DR Bowler, C Goringe, I Goldfarb, and G Briggs. 1997. “Gas-Source Growth of Group IV Semiconductors: II. Growth Regimes and the Effect of Hydrogen.” SURFACE SCIENCE 394 (1-3): 91–104.
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Publisher copy:: 10.1016/S0039-6028(97)00591-8

Authors

+ Owen, J More by this author

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+ Miki, K More by this author

Role:: Author

+ Bowler, DR More by this author

Role:: Author

+ Goringe, C More by this author

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+ Goldfarb, I More by this author

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Journal:: SURFACE SCIENCE More from this journal
Volume:: 394
Issue:: 1-3
Pages:: 91-104
Publication date:: 1997-12-19
DOI:: 10.1016/S0039-6028(97)00591-8
ISSN:: 0039-6028

Keywords:: disilane

chemical vapour deposition

silicon

single crystal epitaxy

scanning tunnelling microscopy

surface structure

density functional calculations
Pubs id:: pubs:174583
UUID:: uuid:013b7f82-41a9-41e4-8720-788cf7a4f65e
Local pid:: pubs:174583
Source identifiers:: 174583
Deposit date:: 2012-12-19

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Copyright date:: 1997

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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