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Thin films of tetragonal zirconia with Bi doping: deposition, characterisation and thermal behaviour

Abstract:

Undoped and Bi-doped zirconia films have been grown by MOCVD on both Si(100) single crystals, and fused SiO2 substrates. Zr(C5H7O2)4 and Bi(C6H5)3 precursors have been used as metal sources. A tetragonal zirconia phase forms on both substrates. Firing of undoped ZrO2 thin films causes a tetragonal to monoclinic transformation above 500°C. By contrast, Bi-doped films remain tetragonal up to 800°C. XPS data provide evidence that progressive heat treatment of Bi-doped ZrO2 causes surface Bi-segr...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Role:
Author
Journal:
THIN SOLID FILMS
Volume:
352
Issue:
1-2
Pages:
73-76
Publication date:
1999-09-08
DOI:
ISSN:
0040-6090
URN:
uuid:013925c1-98e0-4f66-87f4-2d2a0cf3b220
Source identifiers:
37118
Local pid:
pubs:37118

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