Conference item

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas

Abstract:: A new way of analysing the data in a variable stripe length method gain experiment is presented. The stripe length dependence of the gain is measured in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells (MQWs). We confirm that this arises from the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. Comparison with the PL and PLE spectra suggests that the optical gain arises from weakly localised states in the quantum well in our low-indium-content sample. (C) 2002 Elsevier Science B.V. All rights reserved.

Publication status:: Published

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APA Style

Kyhm, K., Taylor, R., Ryan, J., Someya, T., & Arakawa, Y. (2002). Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas. 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), 314(1-4), 47–51.

MLA Style

Kyhm, K, et al. “Saturation of Gain in In0.02Ga0.98N/In0.16Ga0.84N MQW Plasmas.” 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), vol. 314, nos. 1-4, 2002, pp. 47–51.

Chicago Style

Kyhm, K, R Taylor, J Ryan, T Someya, and Y Arakawa. 2002. “Saturation of Gain in In0.02Ga0.98N/In0.16Ga0.84N MQW Plasmas.” In 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), 314:47–51.
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Publisher copy:: 10.1016/S0921-4526(01)01363-1

Authors

+ Kyhm, K More by this author

Role:: Author

+ Taylor, R More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Ryan, J More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Someya, T More by this author

Role:: Author

+ Arakawa, Y More by this author

Role:: Author

Journal:: PHYSICA B-CONDENSED MATTER More from this journal
Volume:: 314
Issue:: 1-4
Pages:: 47-51
Publication date:: 2002-03-01
Event title:: 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12)
DOI:: 10.1016/S0921-4526(01)01363-1
ISSN:: 0921-4526

Keywords:: InGaN

MQW plasmas

gain saturation
Pubs id:: pubs:9301
UUID:: uuid:00c9f9e7-2f4f-4fa7-92ab-1fc7df442002
Local pid:: pubs:9301
Source identifiers:: 9301
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_00c9f9e72f4f4fa792ab1fc7df442002

Terms of use

Copyright date:: 2002

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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