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GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.

Abstract:

InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Whilst long period SLSs have been successfully grown by this technique, the growth of short period structures is adversely affected by step-bunching. By growing the SLSs faster and cooler, good periodicity was achieved as measured by Raman spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) in SLSs with bilayer (GaSb + InAs) thickness...

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Publication status:
Published

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Authors


KLIPSTEIN, P More by this author
LAKRIMI, M More by this author
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Volume:
145
Issue:
1-4
Pages:
778-785
Publication date:
1994-12-05
DOI:
ISSN:
0022-0248
URN:
uuid:00c1355b-2ef9-443e-b444-b6afe106c360
Source identifiers:
29859
Local pid:
pubs:29859

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