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Interference-based molecular transistors

Abstract:
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor.
Publication status:
Published
Peer review status:
Peer reviewed

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


Publisher:
Nature Publishing Group
Journal:
Scientific Reports More from this journal
Publication date:
2016-09-20
Acceptance date:
2016-08-31
EISSN:
2045-2322
ISSN:
2045-2322


Pubs id:
pubs:641080
UUID:
uuid:0014cf7f-b905-4bf4-82f8-9397dfea3ea8
Local pid:
pubs:641080
Source identifiers:
641080
Deposit date:
2016-08-31

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