Journal article
Interference-based molecular transistors
- Abstract:
- Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
Actions
Authors
+ Engineering and Physical Sciences Research Council
More from this funder
- Grant:
- EP/J015067/1
- National Quantum Technology Hub
- Publisher:
- Nature Publishing Group
- Journal:
- Scientific Reports More from this journal
- Publication date:
- 2016-09-20
- Acceptance date:
- 2016-08-31
- EISSN:
-
2045-2322
- ISSN:
-
2045-2322
- Pubs id:
-
pubs:641080
- UUID:
-
uuid:0014cf7f-b905-4bf4-82f8-9397dfea3ea8
- Local pid:
-
pubs:641080
- Source identifiers:
-
641080
- Deposit date:
-
2016-08-31
Terms of use
- Copyright holder:
- Li et al
- Copyright date:
- 2016
- Notes:
- © the Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License.
- Licence:
- CC Attribution (CC BY)
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