Journal article
Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen.
- Abstract:
- The detailed dynamics of the positively charged muonium (Mu+) in heavily doped p-type Si:B is reported. Below 200 K, Mu+ is static and isolated, and is located in a stretched Si-Si bond. Above approximately 200 K, Mu+ diffuses incoherently. At temperatures higher than 300 K, the Mu+-B- complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu+ in Si compared to H+ and D+-this is attributed to its smaller mass.
- Publication status:
- Published
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- Publisher copy:
- 10.1103/physrevlett.100.257602
Authors
- Journal:
- Physical Review Letters More from this journal
- Volume:
- 100
- Issue:
- 25
- Pages:
- 257602
- Publication date:
- 2008-06-01
- DOI:
- EISSN:
-
1079-7114
- ISSN:
-
0031-9007
- Language:
-
English
- Pubs id:
-
pubs:23712
- UUID:
-
uuid:001464d2-a445-4f05-9139-7a71d4c25508
- Local pid:
-
pubs:23712
- Source identifiers:
-
23712
- Deposit date:
-
2012-12-19
- ARK identifier:
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- Copyright date:
- 2008
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