Journal article icon

Journal article

Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen.

Abstract:
The detailed dynamics of the positively charged muonium (Mu+) in heavily doped p-type Si:B is reported. Below 200 K, Mu+ is static and isolated, and is located in a stretched Si-Si bond. Above approximately 200 K, Mu+ diffuses incoherently. At temperatures higher than 300 K, the Mu+-B- complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu+ in Si compared to H+ and D+-this is attributed to its smaller mass.
Publication status:
Published

Actions

Access Document

Publisher copy:
10.1103/physrevlett.100.257602

Authors

More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Journal:
Physical Review Letters More from this journal
Volume:
100
Issue:
25
Pages:
257602
Publication date:
2008-06-01
DOI:
EISSN:
1079-7114
ISSN:
0031-9007


Language:
English
Pubs id:
pubs:23712
UUID:
uuid:001464d2-a445-4f05-9139-7a71d4c25508
Local pid:
pubs:23712
Source identifiers:
23712
Deposit date:
2012-12-19
ARK identifier:

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP