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MODIFICATION OF LAYER INTERDIFFUSION IN GAINAS/GAINASP MULTIPLE-QUANTUM WELLS THROUGH THE CONTROLLED INTRODUCTION OF DISLOCATIONS

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APA Style

Mallard, R., Thrush, E., Galloway, S., Allen, E., & Booker, G. (1993). MODIFICATION OF LAYER INTERDIFFUSION IN GAINAS/GAINASP MULTIPLE-QUANTUM WELLS THROUGH THE CONTROLLED INTRODUCTION OF DISLOCATIONS. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 8th Royal-Microscopical-Society Conference: Microscopy of Semiconducting Materials 1993 (MSM VIII), 134, 477–480.

MLA Style

Mallard, R., et al. “MODIFICATION OF LAYER INTERDIFFUSION IN GAINAS/GAINASP MULTIPLE-QUANTUM WELLS THROUGH THE CONTROLLED INTRODUCTION OF DISLOCATIONS.” MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 8th Royal-Microscopical-Society Conference: Microscopy of Semiconducting Materials 1993 (MSM VIII), no. 134, 1993, pp. 477–80.

Chicago Style

Mallard, R, E Thrush, S Galloway, E Allen, and G Booker. 1993. “MODIFICATION OF LAYER INTERDIFFUSION IN GAINAS/GAINASP MULTIPLE-QUANTUM WELLS THROUGH THE CONTROLLED INTRODUCTION OF DISLOCATIONS.” In MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 8th Royal-Microscopical-Society Conference: Microscopy of Semiconducting Materials 1993 (MSM VIII), 477–80.
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Authors

+ Mallard, R More by this author

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+ Thrush, E More by this author

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+ Galloway, S More by this author

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+ Allen, E More by this author

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+ Booker, G More by this author

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Host title:: MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 8th Royal-Microscopical-Society Conference: Microscopy of Semiconducting Materials 1993 (MSM VIII)
Issue:: 134
Pages:: 477-480
Publication date:: 1993-01-01
ISSN:: 0951-3248
ISBN:: 0750302909

Keywords:: MOLECULAR-BEAM EPITAXY
Pubs id:: pubs:21808
UUID:: uuid:ffda1895-18a0-4566-8420-72d23042176b
Local pid:: pubs:21808
Source identifiers:: 21808
Deposit date:: 2012-12-19

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Copyright date:: 1993

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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