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Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures

Abstract:

InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction and valence bands. A wavevector dependent minigap occurs due to the anticrossing of the electron and hole dispersion relations. As a result the resistivity increases strongly in very pure intrinsic structures due to the reduction in the electron group velocity. Applying a magnetic field parallel to the layers shifts the conduction and valence band relative to each other in k-space and the structu...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Lakrimi, M More by this author
Poulter, AJL More by this author
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Volume:
256
Pages:
207-214
Publication date:
1998-12-05
DOI:
ISSN:
0921-4526
URN:
uuid:ff256f08-c5f4-42c6-93eb-a2a8243c3a1e
Source identifiers:
24095
Local pid:
pubs:24095

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