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Journal article

Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

Abstract:

We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Γ, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lore...

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Publication status:
Published

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Publisher copy:
10.1016/j.ssc.2005.09.037

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
SOLID STATE COMMUNICATIONS More from this journal
Volume:
136
Issue:
11-12
Pages:
595-600
Publication date:
2005-12-01
DOI:
ISSN:
0038-1098
Language:
English
Keywords:
Pubs id:
pubs:26970
UUID:
uuid:fd8ebbed-cb90-474b-ae72-fb49b38558df
Local pid:
pubs:26970
Source identifiers:
26970
Deposit date:
2012-12-19

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