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INTERFACE EFFECTS, BAND OVERLAP AND THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN INAS/GASB INTERBAND RESONANT-TUNNELING DIODES

Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
SOLID-STATE ELECTRONICS More from this journal
Volume:
37
Issue:
4-6
Pages:
977-979
Publication date:
1994-01-01
Event title:
6th International Conference on Modulated Semiconductor Structures
DOI:
ISSN:
0038-1101
Keywords:
Pubs id:
pubs:22674
UUID:
uuid:fd6bb378-f60b-447b-afb2-d83909987cb3
Local pid:
pubs:22674
Source identifiers:
22674
Deposit date:
2012-12-19

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