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Vertical transport through an InAs/GaSb heterojunction at high pressures and magnetic fields

Abstract:

The conduction band of InAs lies lower in energy than the GaSb valence band. In order to preserve continuity of the Fermi level across the interface, charge transfer takes place resulting in a confined quasi two dimensional electron gas (2DEG) in the In As and a confined quasi two dimensional hole gas (2DHG) in the GaSb.

This is the first detailed study into vertical transport in an n-InAs/p-GaSb single heterojunction (SHET). Application of a forward bias (InAs negative with respec...

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Institution:
University of Oxford
Role:
Author
Publication date:
1996
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Language:
English
Subjects:
UUID:
uuid:fc7eef99-19d3-4d38-81c7-a84657282e8b
Local pid:
td:603836290
Source identifiers:
603836290
Deposit date:
2014-04-01

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