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Improved efficiency of GaSb/GaAs TPV cells using an offset p-n junction and off-axis (100) substrates

Abstract:

The external quantum efficiency of p-GaSb/n-GaAs heterojunction TPV cells has been enhanced by using a thin n-GaSb buffer layer between the GaAs and the p-GaSb to offset the p-n junction from the heterojunction. Cells with the p-n junction displaced from the heterojunction showed a significant improvement in photoresponse and open circuit voltage (V-OC). Short circuit current (I-SC) was also increased by addition of a thin n-GaSb layer (similar to100nm) but little or no improvement resulted i...

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Publication status:
Published

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Authors


Shields, PA More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Shmavonyan, G More by this author
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Volume:
738
Pages:
353-359
Publication date:
2004
ISSN:
0094-243X
URN:
uuid:faf437f0-cc98-4b8d-9be2-34530cd367c8
Source identifiers:
29482
Local pid:
pubs:29482
ISBN:
0-7354-0222-1

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