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The indentation response of GaAs-AlAs heterostructures

Abstract:

Low-load indentation has been used to investigate the deformation behaviour of a submicron layer of AlAs on a GaAs substrate. High-resolution scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not penetrated by the indenter and that unusual lateral cracking originates during the unloading phase. Data of intendation load against depth demonstrates the effect of the layer through the increase i...

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Publication status:
Published

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Publisher copy:
10.1080/01418619608239718

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Shafirstein, G More by this author
Ritchie, DA More by this author
Volume:
74
Issue:
5
Pages:
1185-1194
Publication date:
1996-11-05
DOI:
EISSN:
1460-6992
ISSN:
0141-8610
URN:
uuid:fa8c7ded-4251-49df-8aef-00b79d18ef03
Source identifiers:
11423
Local pid:
pubs:11423

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