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Some aspects of the field evaporation behaviour of GaSb.

Abstract:

In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III-V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation events, as a function of the effective electric field at the specimen surface. These variations are discussed in comparison with the behaviour of two different metallic specimen materials, an Al-6XXX se...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Ultramicroscopy More from this journal
Volume:
111
Issue:
6
Pages:
487-492
Publication date:
2011-05-01
DOI:
EISSN:
1879-2723
ISSN:
0304-3991
Language:
English
Keywords:
Pubs id:
pubs:107037
UUID:
uuid:f8ab4661-18a2-43b3-bcbc-0b34b6529a7e
Local pid:
pubs:107037
Source identifiers:
107037
Deposit date:
2012-12-19

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