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Structural and optical properties of H implanted ZnO

Abstract:

ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H imp...

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Publisher copy:
10.1109/COMMAD.2012.6472439

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Pages:
219-220
Publication date:
2012-01-01
DOI:
URN:
uuid:f58c30a6-8f96-4d86-8c50-8497f0ef3c6b
Source identifiers:
423483
Local pid:
pubs:423483
ISBN:
9781467330459

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