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Journal article

Electronic structure of ternary CdxZn1-xO (0 <= x <= 0.075) alloys

Abstract:
Narrowing of the electronic bandgap of ZnO by doping with cadmium opens up further potential uses of the material for photocatalytic applications. However, the mechanism of this important bandgap modification is still unclear. This letter demonstrates that for doped materials, the Fermi level resides within the bandgap in the bulk but lies above the conduction band minimum at the surface of the material, thus producing downward band bending and electron accumulation in the near surface region. © 2012 American Institute of Physics.
Publication status:
Published

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Publisher copy:
10.1063/1.3684251

Authors


More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Role:
Author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Role:
Author
Journal:
APPLIED PHYSICS LETTERS
Volume:
100
Issue:
7
Pages:
072106-072106
Publication date:
2012-02-13
DOI:
ISSN:
0003-6951
URN:
uuid:e80f662b-aae1-4c3a-b230-dc91645b28de
Source identifiers:
321654
Local pid:
pubs:321654
Language:
English

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